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| KSP44/45 KSP44/45 High Voltage Transistor * Collector-Emitter Voltage: VCEO=KSP44: 400V KSP45: 350V * Collector Power Dissipation: PC (max)=625mW 1 TO-92 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSP44 : KSP45 VCEO Collector-Emitter Voltage : KSP44 : KSP45 VEBO IC PC PC TJ Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25C) Collector Power Dissipation (TC=25C) Junction Temperature 1. Emitter 2. Base 3. Collector Value 500 400 400 350 6 300 625 1.5 150 Units V V V V V mA mW W C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP44 : KSP45 * Collector -Emitter Breakdown Voltage : KSP44 : KSP45 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP44 : KSP45 ICES Collector Cut-off Current : KSP44 : KSP45 IEBO hFE Emitter Cut-off Current * DC Current Gain VCE=400V, IB=0 VCE=320V, IB=0 VEB=4V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCB=20V, IE=0, f=1MHz 40 50 45 40 0.5 0.5 0.1 200 A A A VCB=400V, IE=0 VCB=320V, IE=0 0.1 0.1 A A Test Condition IC=100A, IB=0 Min. 500 400 IC=1mA, IB=0 400 350 IE=100A, IC=0 6 V V V Max. Units V V BVCEO BVEBO ICBO VCE (sat) * Collector-Emitter Saturation Voltage 0.4 0.5 0.75 0.75 7 V V V V pF VBE (sat) Cob * Base-Emitter Saturation Voltage Output Capacitance * Pulse Test: PW300s, Duty Cycle2% (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KSP44/45 Typical Characteristics 160 10 VCE=10V 140 120 VCC=150V IC/IB=10 Ta=25 VBE(off)=4V hFE, DC CURRENT GAIN 100 60 40 20 0 -20 -40 1 10 100 1000 10000 t[us], TIME 80 1 tf td 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Turn-On Switching Times 100 1000 Cib[pF],Cob[pF], CAPACITANCE VCC =150V IC /IB=10 Ta=25 10 Ta =25 f=1MHz 100 t[us], TIME Cib ts 1 10 Cob tf 0.1 1 10 100 1 0.1 1 10 100 1000 IC[mA], COLLECTOR CURRENT V CB[V], COLLECTOR-BASE VOLTAGE Figure 3. Turn-Off Switching Times Figure 4. Capacitance 1.0 0.5 VCE[V] COLLECTOR EMITTER VOLTAGE Ta=25 IC=1mA 0.4 IC=10mA IC=50mA Ta=25 0.8 VBE(sat) @IC/IB=10 [V], VOLTAGE 0.6 0.3 VBE(on) @VCE=10V 0.4 0.2 0.2 V CE(sat)@I C/IB=10 0.1 0.0 0.1 0.0 1 10 100 1000 10 100 1000 10000 100000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 5. On Voltage Figure 6. Collector Saturation Region (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KSP44/45 Typical Characteristics (Continued) 100 100000 hFE, SMALL SIGNAL CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE=10V f=10MHz Ta =25 10 Valid for Duty Cycle 10% 10000 1000 1ms 1s 100 100us Tc= Ta= 25 25 1 10 0.1 0.1 1 1 10 100 1000 1 10 MSPA44 100 1000 10000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. High Frequency Current Gain Figure 8. Safe Operating Area (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KSP44/45 Package Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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